Tungsten Titanium Sputtering Target

Tungsten Titanium Sputtering Targets are produced by powder metallurgy technology, and widely used for semiconductor and thin film solar cells.

For semiconductor application, WTi10wt% thin film is used as diffusion barrier and adhesion layer, to separates the metallization layers from semiconductor, for instance, separate aluminium from silicon, or copper from silicon. Thus, the function of semiconductor in microchips can be improved significantly.

For thin film solar cells, WTi10wt% thin films are also used as barrier layer to prevents iron atoms in steel substrate diffuse to molybdenum back contact and CIGS semiconductor.

This targets are also used for LED and tool coating.

Features

Chemical Composition: WTi 90/10wt%, WTi 85/15wt%, special composition can be customized

Segregation of weight: +/-0.5wt%

Available Purity: 3N5, 4N, 4N5

Density: > 99%

Production Technology: powder metallurgy

Shapes: planar targets

Average Grain Size: < 100um